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1

Photoluminescence from pressure-annealed silicon dioxide and nitride films

A Misiuk, A Iller, L Rebohle, M Łukaszewicz, A Kudła

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 150 KB

english, 2000

2

Interaction of point defects with impurities in the Si–SiO2 system and its influence on the properties of the interface

D. Kropman, E. Mellikov, A. Öpik, K. Lott, T. Kärner, I. Heinmaa, T. Laas, A. Medvid, W. Skorupa, S. Prucnal, L. Rebohle, S. Zvyagin, E. Cizmar, M. Ozerov, J. Wosnitza

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 540 KB

english, 2010

3

Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

A.N. Nazarov, I.N. Osiyuk, V.S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 713 KB

2002

4

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Millisecond processing beyond chip technology: From electronics to photonics

Skorupa, W., Anwand, W., Posselt, M., Prucnal, S., Rebohle, L., Voelskow, M., Zhou, S., McMahon, R. A., Smith, M., Gebel, T., Hentsch, W., Fendler, R., Luthge, T., Satta, A., Borseth, T. Moe, Kuznetso

Year:

2007

Language:

english

File:

PDF, 2.14 MB

english, 2007

5

[IEEE 2005 13th International Conference on Advanced Thermal Processing of Semiconductors - Santa Barbara, CA, USA (04-07 Oct. 2005)] 2005 13th International Conference on Advanced Thermal Processing of Semiconductors - Advanced Thermal Processing of Semiconductor Materials in the MSEC-Range

Skorupa, W., Yankov, R.A., Voelskow, M., Anwand, W., Panknin, D., McMahon, R.A., Smith, M., Gebel, T., Rebohle, L., Fendler, R., Hentsch, W.

Year:

2005

Language:

english

File:

PDF, 5.59 MB

english, 2005

6

[IEEE 2006 14th International Conference on Advanced Thermal Processing of Semiconductors - Kyoto (2006.10.10-2006.10.13)] 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors - Millisecond Annealing with Flashlamps: Tool and Process Challenges

Gebel, T., Rebohle, L., Fendler, R., Hentsch, W., Skorupa, W., Voelskow, M., Anwand, W., Yankov, R. A.

Year:

2006

Language:

english

File:

PDF, 1.59 MB

english, 2006

7

A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle, Lars, Prucnal, Slawomir, Skorupa, Wolfgang

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 6.58 MB

english, 2016

8

Millisecond thermal processing using flash lamps for the advancement of thin layers and functional coatings

Skorupa, Wolfgang, Schumann, Thomas, Rebohle, Lars

Journal:

Surface and Coatings Technology

Year:

2016

Language:

english

File:

PDF, 2.11 MB

english, 2016

9

Doping by flash lamp annealing

Prucnal, S., Rebohle, L., Skorupa, W.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.57 MB

english, 2016

10

Determination of the thermal cycle during flash lamp annealing without a direct temperature measurement

Rebohle, L., Neubert, M., Schumann, T., Skorupa, W.

Journal:

International Journal of Heat and Mass Transfer

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

11

[Springer Series in Materials Science] Flash Lamp Annealing Volume 288 (From Basics to Applications) || The Technology of Flash Lamp Annealing

Rebohle, Lars, Prucnal, Slawomir, Reichel, Denise

Year:

2019

Language:

english

File:

PDF, 2.29 MB

english, 2019

12

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

A. Misiuk, B. Surma, B. Surma, L. Rebohle, J. Jun, I. V. Antonova, I. Tyschenko, A. Romano-Rodriguez, M. Lopez

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 160 KB

english, 1999

13

Strong Blue and Violet Photo- and Electroluminescence from Ge- and Si-Implanted Silicon Dioxide

L. Rebohle, J. von Borany, R. Grötzschel, A. Markwitz, B. Schmidt, I. E. Tyschenko, W. Skoruba, H. Fröb, K. Leo

Journal:

physica status solidi (a)

Year:

1998

Language:

english

File:

PDF, 180 KB

english, 1998

14

ChemInform Abstract: Efficient Blue Light Emission from Silicon.

L. Rebohle, J. von Borany, D. Borchert, H. Froeb, T. Gebel, M. Helm, W. Moeller, W. Skorupa

Journal:

Year:

2001

File:

PDF, 29 KB

2001

15

Electroluminescence, charge trapping and quenching in Eu implantes SiO2–Si structures

S. Tyagulskiy, I. Tyagulskyy, A. Nazarov, V. Lysenko, L. Rebohle, J. Lehmann, W. Skorupa

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 302 KB

english, 2009

16

The correlation between electroluminescence properties and the microstructure of Europium-implanted MOS light emitting diodes

L. Rebohle, J. Lehmann, A. Kanjilal, S. Prucnal, A. Nazarov, I. Tyagulskii, W. Skorupa, M. Helm

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2009

Language:

english

File:

PDF, 369 KB

english, 2009

17

Defect engineering in the MOSLED structure by ion implantation

S. Prucnal, A. Wójtowicz, K. Pyszniak, A. Drozdziel, J. Zuk, M. Turek, L. Rebohle, W. Skorupa

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2009

Language:

english

File:

PDF, 330 KB

english, 2009

18

The inverse energy transfer between Ge nanocrystals and erbium in SiO2 and its dependence on microstructure

L. Rebohle, A. Kanjilal, W. Skorupa, M. Helm

Journal:

Optical Materials

Year:

2011

Language:

english

File:

PDF, 280 KB

english, 2011

19

Lysine adsorption on the silanized SiO2-surface for immobilization of the estrogen receptor hERα

C. Cherkouk, L. Rebohle, W. Skorupa

Journal:

Applied Surface Science

Year:

2011

Language:

english

File:

PDF, 1005 KB

english, 2011

20

Spraying spin coating silanization at room temperature of a SiO2 surface for silicon-based integrated light emitters

C. Cherkouk, L. Rebohle, W. Skorupa, T. Strache, H. Reuther, M. Helm

Journal:

Journal of Colloid and Interface Science

Year:

2009

Language:

english

File:

PDF, 1.11 MB

english, 2009

21

Bioconjugation of the estrogen receptor hERα to a quantum dot dye for a controlled immobilization on a SiO2 surface

C. Cherkouk, L. Rebohle, W. Skorupa

Journal:

Journal of Colloid and Interface Science

Year:

2011

Language:

english

File:

PDF, 921 KB

english, 2011

22

Energy transfer from Gd to Er atoms in SiO2(GdEr)-MOSLEDs produced by ion implantation

S. Prucnal, J.M. Sun, L. Rebohle, W. Skorupa

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 282 KB

english, 2008

23

Correlation between electroluminescence and charge trapping in multi-color Eu implanted Si-based light-emitting diodes

A.N. Nazarov, I.P. Tyagulskyy, S.I. Tyagulskiy, L. Rebohle, W. Skorupa, J. Biskupek, U. Kaiser

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2009

Language:

english

File:

PDF, 697 KB

english, 2009

24

Rare-earth implanted Si-based light emitters and their use for smart biosensor applications

L. Rebohle, C. Cherkouk, S. Prucnal, M. Helm, W. Skorupa

Journal:

Year:

2009

Language:

english

File:

PDF, 375 KB

english, 2009

25

Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers

L Rebohle, J von Borany, W Skorupa, I.E Tyschenko, H Fröb

Journal:

Journal of Luminescence

Year:

1998

Language:

english

File:

PDF, 108 KB

english, 1998

26

The effect of annealing under hydrostatic pressure on the visible photoluminescence from si+-ion implanted SiO2 films

I.E Tyschenko, L Rebohle, R.A Yankov, W Skorupa, A Misiuk, G.A Kachurin

Journal:

Journal of Luminescence

Year:

1998

Language:

english

File:

PDF, 119 KB

english, 1998

27

Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers

J Zhao, L Rebohle, T Gebel, J von Borany, W Skorupa

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 142 KB

english, 2002

28

Preparation of SiO2 films with embedded Si nanocrystals by reactive r.f. magnetron sputtering

H. Seifarth, R. Grötzschel, A. Markwitz, W. Matz, P. Nitzsche, L. Rebohle

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 634 KB

english, 1998

29

Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layers

L. Rebohle, I.E. Tyschenko, H. Fröb, K. Leo, R.A. Yankov, J. von Borany, G.A. Kachurin, W. Skorupa

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

30

Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions

L. Rebohle, A.G. Revesz, W. Skorupa, H.L. Hughes

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 325 KB

english, 1999

31

Ion beam processing for Si/C-rich thermally grown SiO2 layers: photoluminescence and microstructure

L. Rebohle, T. Gebel, H. Fröb, H. Reuther, W. Skorupa

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 110 KB

english, 2001

32

Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

I.E. Tyschenko, K.S. Zhuravlev, E.N. Vandyshev, A. Misiuk, L. Rebohle, W. Skorupa, R.A. Yankov, V.P. Popov

Journal:

Optical Materials

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

33

Strong visible electroluminescence from Ge- and Sn-implanted silicon dioxide layers

L Rebohle, T Gebel, J von Borany, H Fröb, D Borchert, W Skorupa

Journal:

Materials Science and Engineering: C

Year:

2002

Language:

english

File:

PDF, 82 KB

english, 2002

34

Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

T. Gebel, L. Rebohle, J. Sun, W. Skorupa, A.N. Nazarov, I. Osiyuk

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 204 KB

english, 2003

35

Electroluminescence from thin SiO2 layers after Si- and C-coimplantation

T. Gebel, L. Rebohle, J. Sun, W. Skorupa

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

36

Energy level engineering in InAs quantum dot stacks embedded in AlAs/GaAs superlattices

L Rebohle, F.F Schrey, S Hofer, G Strasser, K Unterrainer

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

37

The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing

Matthias Voelskow, Ioannis Stoimenos, Lars Rebohle, Wolfgang Skorupa

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 280 KB

english, 2011

38

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

L. Rebohle, J. von Borany, H. Fröb, W. Skorupa

Journal:

Applied Physics B: Lasers and Optics

Year:

2000

Language:

english

File:

PDF, 793 KB

english, 2000

39

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

S. Kaschieva, L. Rebohle, W. Skorupa

Journal:

Applied Physics A: Materials Science & Processing

Year:

2003

Language:

english

File:

PDF, 206 KB

english, 2003

40

Group-IV nanocluster formation by ion-beam synthesis

W. Skorupa, L. Rebohle, T. Gebel

Journal:

Applied Physics A: Materials Science & Processing

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

41

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

A.N. Nazarov, I.N. Osiyuk, J.M. Sun, R.A. Yankov, W. Skorupa, I.P. Tyagulskii, V.S. Lysenko, S. Prucnal, T. Gebel, L. Rebohle

Journal:

Applied Physics B: Lasers and Optics

Year:

2007

Language:

english

File:

PDF, 270 KB

english, 2007

42

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices

S. Prucnal, L. Rebohle, A.N. Nazarov, I.N. Osiyuk, I.P. Tjagulskii, W. Skorupa

Journal:

Applied Physics B: Lasers and Optics

Year:

2008

Language:

english

File:

PDF, 974 KB

english, 2008

43

Electroluminescence (at 316 nm) and electrical stability of

S. Prucnal, L. Rebohle, W. Skorupa

Journal:

Applied Physics B: Lasers and Optics

Year:

2009

Language:

english

File:

PDF, 560 KB

english, 2009

44

Physical limitations of the electroluminescence mechanism in

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, W. Skorupa

Journal:

Applied Physics B: Lasers and Optics

Year:

2010

Language:

english

File:

PDF, 331 KB

english, 2010

45

Blue electroluminescence of ytterbium clusters in SiO2by

S. Prucnal, L. Rebohle, W. Skorupa

Journal:

Applied Physics B: Lasers and Optics

Year:

2010

Language:

english

File:

PDF, 314 KB

english, 2010

46

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers

L. Rebohle, T. Gebel, J. von Borany, W. Skorupa, M. Helm, D. Pacifici, G. Franzò, F. Priolo

Journal:

Applied Physics B: Lasers and Optics

Year:

2002

Language:

english

File:

PDF, 348 KB

english, 2002

47

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

A.N. Nazarov, J.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa, R.A. Yankov

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 128 KB

english, 2005

48

Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications

L. Rebohle, T. Gebel, R.A. Yankov, T. Trautmann, W. Skorupa, J. Sun, G. Gauglitz, R. Frank

Journal:

Optical Materials

Year:

2005

Language:

english

File:

PDF, 370 KB

english, 2005

49

Short-wavelength photoluminescence of SiO2layers implanted with high doses of Si+, Ge+, and Ar+ions

G. A. Kachurin, I. E. Tyschenko, L. Rebohle, W. Skorupa, R. A. Yankov, H. Froeb, T. Boehme, K. Leo

Journal:

Year:

1998

Language:

english

File:

PDF, 97 KB

english, 1998

50

Photoluminescence of Si3N4films implanted with Ge+and Ar+ions

I. E. Tyschenko, V. A. Volodin, L. Rebohle, M. Voelskov, V. Skorupa

Journal:

Year:

1999

Language:

english

File:

PDF, 132 KB

english, 1999